dcr2290v65 phase control thyristor ds6073 - 2 january 2014 (ln 31243 ) 1 / 10 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? high power drives ? high voltage power supplies ? static switches voltage ratings part and ordering number repetitive peak voltages v drm and v rrm v conditions dcr 2290v65* dcr2290v60 dcr2290v55 65 00 60 00 5 500 t vj = - 40c to 125c, i drm = i rrm = 3 00ma, v drm , v rrm t p = 10ms, v dsm & v rsm = v drm & v rrm + 100v respectively lower voltage grades available. * 6200v @ - 40 0 c, 6500v @ 0 0 c ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: dcr 2290 v 55 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v drm 65 00v i t(av) 229 0a i tsm 300 00a dv/dt* 1500v/s di/dt 5 00a/s * higher dv/dt selections available outline type code: v (see package details for further information) fig. 1 package outline
semiconductor dcr2290v65 2 / 10 www.dynexsemi.com current ratings t case = 60c unless stated otherwise symbol parameter test conditions max. units double side cooled i t(av) mean on - state current half wave resistive load 2290 a i t(rms) rms value - 3597 a i t continuous (direct) on - state current - 3520 a surge ratings symbol parameter test conditions max. units i tsm surge (non - repetitive) on - state current 10ms half sine, t case = 125c 30.0 ka i 2 t i 2 t for fusing v r = 0 4.50 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.00746 c/w single side cooled anode dc - 0.0130 c/w cathode dc - 0.0178 c/w r th(c - h) thermal resistance C case to heatsink clamping force 54kn double side - 0.002 c/w (with mounting compound) single side - 0.004 c/w t vj virtual junction temperature blocking v drm / vrrm - 125 c t stg storage temperature range - 55 125 c f m clamping force 48.0 59.0 kn
semiconductor dcr2290v65 3 / 10 www.dynexsemi.com dynamic characteristics symbol parameter test conditions min. max. units i rrm /i drm peak reverse and off - state current at v rrm /v drm , t case = 125c - 3 00 ma dv/dt max. linear rate of rise of off - state voltage to 67% v drm , t j = 125c, gate open - 1500 v/s di/dt rate of rise of on - state current from 67% v drm to 2x i t(av) repetitive 50hz - 150 a/s gate source 30v, 10 ? , non - repetitive - 5 00 a/s t r < 0.5s, t j = 125c v t(to) threshold voltage C low level 200a to 1700a at t case = 125c - 1.0 v threshold voltage C high level 1700a to 7000a at t case = 125c - 1.237 v r t on - state slope resistance C low level 200a to 1700a at t case = 125c - 0.4286 m ? on - state slope resistance C high level 1700a to 7000a at t case = 125c - 0.3518 m ? t gd delay time v d = 67% v drm , gate source 30v, 10 ? - 3 s t r = 0.5s, t j = 25c t q turn - off time t j = 125c, v r = 200v, di/dt = 1a/s, - 1200 s dv dr /dt = 20v/s linear q s stored charge t j = 125c, di/dt C 1a/s, v r pk =39 00v, v rm = 26 00v 2400 6000 c i l latching current t j = 25c, v d = 5v - 3 a i h holding current t j = 25c, r g - k = ? , i tm = 500a, i t = 5a - 300 ma
semiconductor dcr2290v65 4 / 10 www.dynexsemi.com gate trigger characteristics and ratings symbol parameter test conditions max. units v gt gate trigger voltage v drm = 5v, t case = 25c 1.5 v v gd gate non - trigger voltage at v drm, t case = 125c 0.4 v i gt gate trigger current v drm = 5v, t case = 25c 400 ma i gd gate non - trigger current v drm = 5v, t case = 25c 15 ma curves fig.2 maximum & minimum on - state characteristics v tm equation where a = 0.537658 b = 0.064222 v tm = a + bln (i t ) + c.i t +d. ? i t c = 0.000301 d = 0.005935 these values are valid for t j = 125c for i t 1 00a to 72 00a 0 1000 2000 3000 4000 5000 6000 7000 1.0 2.0 3.0 4.0 instantaneous on - state current i t - (a) instantaneous on - state voltage v t - (v) min 125 c max 125 c min 25 c max 25 c
semiconductor dcr2290v65 5 / 10 www.dynexsemi.com fig.3 on - state power dissipation C sine wave fig.4 maximum permissible case temperature, double side cooled C sine wave fig.5 maximum permissible heatsink temperature, double side cooled C sine wave fig.6 on - state power dissipation C rectangular wave 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 0 1000 2000 3000 4000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) 180 120 90 60 30 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1000 2000 3000 4000 5000 mean power dissipation - (kw) mean on - state current, i t(av) - (a) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 maximum heatsink temperature, t heatsink - ( c) mean on - state current, it(av) - (a) 180 120 90 60 30 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 maximum heatsink temperature, t heatsink - ( c) mean on - state current, it (av) - (a) 180 120 90 60 30
semiconductor dcr2290v65 6 / 10 www.dynexsemi.com fig.7 maximum permissible case temperature, double side cooled C rectangular wave fig.8 maximum permissible heatsink temperature, double side cooled C rectangular wave fig.9 maximum (limit) transient thermal impedance C junction to case (c/kw) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0 1000 2000 3000 4000 5000 6000 maximum permissible case temperature , tcase - ( c) mean on - state current, it(av) - (a) d.c. 180 120 90 60 30 0 25 50 75 100 125 0 1000 2000 3000 4000 5000 maximum heatsink temperature theatsink - (o c) mean on - state current, it(av) - (a) d.c. 180 120 90 60 30 0 2 4 6 8 10 12 14 16 18 20 0.001 0.01 0.1 1 10 100 time ( s ) thermal impedance , z th(j-c) - ( c /kw) double side cooling anode side cooling cathode sided cooling 1 2 3 4 double side cooled r i (c/kw) 0.9206 1.8299 3.4022 1.3044 t i (s) 0.0076807 0.0579454 0.4078613 1.2085 anode side cooled r i (c/kw) 0.9032 1.6719 3.0101 7.4269 t i (s) 0.0075871 0.0536531 0.3144537 5.624 cathode side cooled r i (c/kw) 0.9478 2.0661 1.6884 13.0847 t i (s) 0.0078442 0.0645541 0.3894389 4.1447 ? r th(j-c) conduction tables show the increments of thermal resistance r th(j-c) when the device operates at conduction angles other than d.c. double side cooling anode side cooling cathode sided cooling ? z th (z) ? z th (z) ? z th (z) ? sine. rect. ? sine. rect. ? sine. rect. 180 1.34 0.88 180 1.34 0.88 180 1.33 0.88 120 1.57 1.30 120 1.57 1.30 120 1.57 1.29 90 1.83 1.54 90 1.84 1.54 90 1.83 1.53 60 2.08 1.81 60 2.08 1.81 60 2.07 1.80 30 2.27 2.11 30 2.28 2.11 30 2.26 2.10 15 2.36 2.28 15 2.37 2.28 15 2.35 2.26 )] / exp( 1 ( [ 4 1 i i i i th t t r z ? ? ? ? ? ? ?
semiconductor dcr2290v65 7 / 10 www.dynexsemi.com fig.10 multi - cycle surge current fig.11 single - cycle surge current fig. 12 stored charge fig. 13 reverse recovery current 0 100 200 300 400 500 600 700 0 10 20 30 reverse recovery current, i rr - (a) rate of decay of forward current, di/dt - (a/us) i rrmin = 40.014*(di/dt) 0.8087 i rrmax = 58.166*(di/dt) 0.7385 conditions: tj = 125 o c, v rpeak ~ 3900v v rm ~ 2600v snubber as appropriate to control reverse voltages 0 5000 10000 15000 20000 25000 30000 0 10 20 30 stored charge, qs - (uc) rate of decay of forward current, di/dt - (a/us) q smax = 5921*(di/dt) 0.4669 q smin = 2786.5*(di/dt) 0.5921 conditions: tj=125 o c, v rpeak ~ 3900v v rm ~ 2600v snubber as appropriate to control reverse voltages
semiconductor dcr2290v65 8 / 10 www.dynexsemi.com fig14 gate characteristics fig. 15 gate characteristics 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 gate trigger voltage, v gt - (v) gate trigger current i gt , - (a) tj = 125 o c tj = 25 o c tj = - 40 o c preferred gate drive area upper limit lower limit 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 10 gate trigger voltage, v gt - (v) gate trigger current, i gt - (a) lower limit upper limit 5w 10w 20w 50w 100w 150w - 40c
semiconductor dcr2290v65 9 / 10 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. lead length: 420mm lead terminal connector: m4 ring package outline type code: v fig.16package outline device maximum thickness (mm) minimum thickness (mm) dcr1910v85 28.31 27.56 dcr2290v65 27.95 27.2 dcr2720v52 27.69 26.94 dcr3030v42 27.57 26.82 dcr3780v28 27.34 26.59 dcr4060v22 27.265 26.515 dcr4940v18 27.16 26.43
semiconductor dcr2290v65 10 / 10 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the info rmation contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the appli cation. the user is responsible for product selection and ensuring all safety and any warning requirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the info rmation in this publication it may contain inaccuracies or typographical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a fail ure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause perman ent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precauti ons should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotat ions are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdo m. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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